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3-Phase Polysilicon Overlay-Gate Buried-Channel CCD
Author(s): 
Pages: 18-22+51
Year: Issue:  1
Journal: Optoelectronic Technology

Keyword:  CCD器件交迭埋层双列式高斯分布转移效率扩散方法信号处理能力动态范围视频信号;
Abstract: This paper briefly describes the structure and principle of newly developed linear-array buried-channel CCD (BCCD) with 3-phase,polysilicon overlay-gate, And, experimental results are presented.The BCCD exhibit dual-line separate output, light-sensitive area with n~+-n~--p structure, and buried-layer provided by phosphorus ion implantation. Transfer efficiency is of over 99.999%.
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