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Characteristics of a-Si TFT Addressed LCDs
Author(s): 
Pages: 62-68+11
Year: Issue:  2
Journal: Optoelectronic Technology

Keyword:  薄膜晶体管寻址LCDa-Si TFT动态特性介质损耗液晶显示器源汇驱动电压透射率;
Abstract: 由薄膜晶体管寻址的液晶显示器(TFT-LCD)的透射率-驱动电压(T—V)关系应给出 TFT—LCD 的“通”和“断”态的动态特性。根据静态条件下 TFT 的转换特性和 LC 的介质损耗进行数值计算所得的“通”态特性,发现与实验结果很好地符合。另一方面,由 T—V 特性估算的漏电流与工作状态直接测量到的又有差异,前者明显地增大了。该电流的显著增大主要来源于源汇线的电场对源汇线周围的 LC 干扰,从而致使象素电极上某些部分变暗。
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