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zai 300 xia zhi zuo duo jing gui tft
Author(s): 
Pages: 356
Year: Issue:  4
Journal: Optoelectronic Technology

Keyword:  硅膜非晶硅石英玻璃显示板开口率电气工业迁移率技术研究所基盘栅压;
Abstract: <正> 日本冲电气工业基盘技术研究所已用在300℃下形成多晶硅膜制作 TFT。多晶硅的迁移率比非晶硅的迁移率高。因此,在同一封底上形成 TFT 显示板的激励电路,使 TFT 小型化,可提高的开口率。通常TFT 用的多晶硅膜由于在600℃以上的高温中形成,因此在衬底上要采用高价的石英玻璃。现今的多硅膜
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