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Aluminum Electrode in Amorphous-Silicon Thin Film Transistor Matrix Circuit
Author(s): 
Pages: 284-288
Year: Issue:  4
Journal: Optoelectronic Technology

Keyword:  TFT matrixanodic oxidation techniqueaperture rate;
Abstract: The paper introduces advantages of aluminum electrode in amorphous-sili-con thin film transistor (a-Si TFT) matrix circuit and a simple manufacturing method of Al2O3 film by using of anodic oxidation process.
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