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Photo-electrical Properties of Amorphous MgInO Thin Film Transistors
Author(s): 
Pages: 27-29
Year: Issue:  1
Journal: Optoelectronic Technology

Keyword:  thin film transistors(TFTs)metal oxideultra violet detectionMgInOphoto-electrical properties;
Abstract: The responsivity of MgInO TFTs in the depletion state with different wavelength was investigated.The devices show a cutoff wavelength of 360 nm,which is suitable for UV detection.In addition,the influences of source-to-drain voltage and the channel length on the photocurrent were illustrated as well.The photocurrent shows a high linearity to source-to-drain voltage,while with the channel length decreasing,the photocurrent increases as the transit time is shortened.
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