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Fabrication and Application of GaN-Based Au-Free Low Temperature Ohmic Contact Electrodes
Author(s): 
Pages: 71-77
Year: Issue:  6
Journal: Optics & Optoelectronic Technology

Keyword:  AlGaN/GaN HEMTsAu-free ohmic contactlow temperature annealingpre-ohmic recessannealing;
Abstract: An AlGaN/GaN HEMTs low temperature Au-free ohmic contact electrode is prepared,which is compatible with Si-CMOS production line.The effects of the depth of pre-ohmic recess and the annealing alloy condition on the Aufree ohmic contact characteristics of Si-based AlGaN/GaN heterojunction are analyzed.The current-voltage characteristics,contact resistivity and surface morphology of the Ti/Al/Ti/TiW Au-free contact electrodes with different ohmic recess and annealing conditions are systematically investigated.AlGaN/GaN MISHEMTs are fabricated by low temperature annealed Ti/Al/Ti/TiW Au-free process.The experimental results show that the ohmic contact electrodes with contact resistivity of 5.44×10-5Ω·cm2 and smooth surface morphology can be obtained by using Au-free process.The source and drain saturation current of this device is IDSS=345.7 mA/mm at gate-source voltage VGS=0 V.It is of great significance for the realization of low temperature Au-free ohmic contact process for undoped AlGaN/GaN HEMTs devices.
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